Tag Archives: Inversion Coefficient

Gm/ID versus IC

Posted on August 26, 2016 by Dai

According to the EKV model, the inversion coefficient, IC, is defined by the ratio of drain current to a specified drain current, IDSspec, where VGS-VT = 2n*kT/q [1]. In order to know the IC, I have to set up a separate testbench to … Continue reading →

Posted in Analog Design, MOS Models | Tagged , , , | 1 Comment

Gm/Id-Design Methodology

Posted on July 30, 2016 by Dai

Three times of entering a wrong password to access this site… Earlier in 2012, I wrote an introductory post about EKV model and later extended the related topic a little bit in another post – Stay Simple – Square-Law Equation … Continue reading →

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The EKV MOS Model

Posted on October 23, 2012 by Dai

Recently I’m referring some papers about low-voltage amplifiers. I came to know the EKV MOS model, which is mainly dedicated to low-voltage and low-current analog design. Then I read a short history of the EKV model written by one of … Continue reading →

Posted in MOS Models | Tagged , , | 3 Comments