Category Archives: MOS Models

Gm/ID versus IC

According to the EKV model, the inversion coefficient, IC, is defined by the ratio of drain current to a specified drain current, IDSspec, where VGS-VT = 2n*kT/q [1]. In order to know the IC, I have to set up a separate testbench to … Continue reading

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Go Moderate

Either Prof. Sansen’s inversion coefficient (IC) approach or Prof. Murmann’s Gm/Id design methodology is telling the same story of power-aware analog design. With the help of Gm/Id design kit, I can easily visualize the transistor performance as a function of its gate-source voltage … Continue reading

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Gm/Id-Design Methodology

Three times of entering a wrong password to access this site… Earlier in 2012, I wrote an introductory post about EKV model and later extended the related topic a little bit in another post – Stay Simple – Square-Law Equation … Continue reading

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Stay Simple – Square-Law Equation Related

The 1st post in 2013. Happy middle new year! 😉 Nowadays most of us in academy are designing analog circuits in deep-submicron nodes using short-channel transistors. Putting them together with the digital, building up a system, and selling it with extraordinary performance in top … Continue reading

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The EKV MOS Model

Recently I’m referring some papers about low-voltage amplifiers. I came to know the EKV MOS model, which is mainly dedicated to low-voltage and low-current analog design. Then I read a short history of the EKV model written by one of … Continue reading

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An Interesting Tutorial Given by Mr. Matching

Are you familiar with this seminal paper, titled “Matching Properties of MOS Transistors” with the first author Marcel Pelgrom? Yes! Pelgrom, the Mr. Matching! I happened to find an online tutorial dealing with component matching given by him from IDESA. … Continue reading

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3D KungFu Transistor

I watched 3D Kung Fu Panda 2 last Sunday. Yeah, 3D! I still remember the state of great excitement the first time when I sat in a cinema for a 3D movie 18 years ago, watching a huge stone running … Continue reading

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